Infrared Emitters and photodetectors with InAsSb bulk active region
نویسندگان
چکیده
Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T=80 and 150K suggested large absorption coefficient and carrier lifetimes sufficient for the development of long wave infrared photodetectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large activer layer thickness. Conference Name: SPIE Defense, Security+ Sensing Conference Date: April 29, 2013
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